提拉法生长锗酸铋晶体的结晶习性  

Habit of Czochralski Grown Bismuth Germanate Crystals

作　　者：廖晶莹[1] R.C.deBoor P.Bennema 

机构地区：[1]中国科学院上海硅酸盐研究所,上海200050 [2]RIM Laboratory of Solid State Chemistry University of Nijmegen,The Netherlands

出　　处：《人工晶体学报》1992年第4期329-336,共8页Journal of Synthetic Crystals

摘　　要：介绍了提拉法生长锗酸铋单晶(Bi_4 Ge_3 O_(12),简称 BGO)在不同生长条件下的结晶形貌。根据 Gibss-Wulf 晶体生长最小表面能原理,利用 Hartman 对晶体外部结构分析的 PBC 理论和Bennema 等人提出的形态重要性理论,得到的 BGO 晶体 F 晶面的形态重要性顺序,在已知晶体生长取向的情况下,我们就能够推测 BGO 晶体在扩大面上出现的棱和柱体上可能出现的晶面。这种推测晶体形貌的模型与实验结果很好一致。The morphology of Bi_4Ge_3O_(12) (BGO) crystals grown by Czochra-lski method under different growth conditions is reported in detail in this pa-per.In case of BGO it is possible to predict morphological phenomena onCzochralski grown crystals if predominant F-face and growth direction areknown on the basis of the principles of minium Gibbs free energy,PBC ana-lysis and in order of morphological importance.The predicted morphologicalmodel is in good agreement with observed phenomena on the BGO crystals.

关 键 词：锗酸铋晶体 结晶 熔盐法 

分 类 号：O782.4[理学—晶体学]