用于X射线成像的非晶硒合金膜的制备和性能测试  

Preparation and Properties of Amorphous Selenium Alloy Film for X-Ray Imaging

作　　者：徐向晏[1] 牛憨笨[1] 阔晓梅[1] 王云程[1] 郭振琪[2] 

机构地区：[1]中国科学院西安光学精密机械研究所光电子部,西安710068 [2]西北大学分析测试研究中心,西安710069

出　　处：《光学学报》2001年第12期1467-1473,共7页Acta Optica Sinica

摘　　要：在X射线诊断成像方面 ,非晶硒 (a Se)是最有前途的探测材料之一。通过实验研究了a Se合金膜的制备方法 ,用飞行时间方法测量了载流子的漂移迁移率和寿命 ,讨论了对a Se合金膜性能有重要影响的因素。通过对40 0 μm厚a Se合金膜X射线光电流的测量 ,确定了a Se合金膜对X射线的光电响应特性。实验表明 ,a Se合金膜具有线性的光电转换特性 ;灵敏度与场强有关。在 10V μm场强下 ,对于医疗诊断常用的轫致辐射X射线谱 ,用X射线在a Se合金膜中产生一电子 -空穴对约需 45eV的能量。Amorphous selenium alloy (a-Se alloy) is currently of great interest as X-ray imaging receptor due to its high resolution. The a-Se alloy films are deposited by vacuum evaporation, the transport properties of hole and electron are measured by time of flight technique. Some factors, which affect the properties of a-Se alloy film, are discussed. X-ray photocurrent is measured by using 400 μm thick film. The results show that linear photoelectric conversion existed in a-Se alloy film, and its sensitivity to X-ray irradiation depends on electric field. The calculation indicates that about 45 eV is needed for X-ray to release an electric-hole pair in a-Se alloy film at 10 V/μm electric field.

关 键 词：X射线成像 非晶硒合金膜 制备 性能测试 飞行时间 X射线光电流 灵敏度 X线射论断 电场强度 载流子 医学诊断 

分 类 号：O484.4[理学—固体物理] R814[理学—物理]