Comparative Study of Properties of ZnO／GaN／Al203 and ZnO／Al203 Films Grown by Low－Pressure Metal Organic Chemical Vapour Deposition  

作　　者：张源涛 高仲民 王金忠 方秀军 刘大力 李万成 马燕 杨晓天 赵佰军 杨洪军 杜国同 缪国庆 杨天鹏 刘博阳 

机构地区：[1]StateKeyLaboratoryofIntegratedOptoelectronics,CollegeofElectronicScienceandEngineering,JinlinUniversity,Changchun130023JinlinUniversity,Changchun130023 [2]StateKeyLaboratoryofInorganicSynthesisandPreparativeChemistry,CollegeofChemistry,JilinUniversity,Changchun130023JilinUniversity,Changchun130023 [3]不详 [4]OpenLaboratoryofExcitedStateProcesses,ChangchunInstituteofOptics,FineMechanicsandPhysics,ChineseAcademyofSciences,Changchun130021ChineseAcademyofSciences,Changchun130021

出　　处：《Chinese Physics Letters》2003年第11期2045-2048,共4页中国物理快报（英文版）

分 类 号：O484.1[理学—固体物理] TN304.21[理学—物理]