BaTiO_3半导瓷PTC现象的机理研究进展  

Recent Progress in Research on PTC Phenomena

作　　者：祝炳和[1] 

机构地区：[1]中国科学院上海硅酸盐研究所,上海200050

出　　处：《电子元件与材料》2003年第11期21-27,30,共8页Electronic Components And Materials

摘　　要：综述了近年来PTC机理研究的进展。着重讨论以下几点:Heywang 及Jonker模型;单个晶界电性测定;用阻抗分析区分晶界及晶粒电阻;应力与PTC效应;晶界结构与PTC效应;晶界第二相、晶界层与PTC效应;化学吸附气体作为电子陷阱。最后讨论了今后还需进一步研究的方面。Over the past 45 years, the advance in the research on PTC mechanism is reviewed. Discussed are Heywang and Jonker model; measurement electrical property of single grain boundary; specification of grain resistivity and grain boundary resistivity by impedance analysis; stress and PTC effect, grain boundary structure and PTC effect; secondary phase of grain boundary; grain boundary layer and PTC effect; chemisorption gases as electron traps. Further research on PTC mechanism is also discussed.

关 键 词：钛酸钡 PTC现象 晶界 畴结构 

分 类 号：TN373[电子电信—物理电子学]