混合杂质半导体费米能级公式及数值计算  

Formulae of Fermi Energy in Poly-doped Semiconductor and Algorithm Computation

作　　者：王中长[1] 刘天模[1] 李家鸣 

机构地区：[1]重庆大学材料科学与工程学院,重庆400044 [2]国家仪表功能材料工程技术研究中心,重庆400000

出　　处：《重庆大学学报（自然科学版）》2003年第11期52-55,共4页Journal of Chongqing University

摘　　要：利用电中性条件,结合电子和空穴浓度计算式,推导出了当施主和受主同时存在时,费米能级的计算式,并且根据实际应用条件作了讨论,推导了各种条件下的费米能级计算公式。对于推导出来的隐式方程式,利用了数据计算方法进行计算。最后讨论了单一杂质半导体的费米能级公式。对所推导出来的材料,先进行计算机数值计算,再与实验结果进行比较,结果发现,计算值与实验值吻合的很好,从而说明了理论的正确性。在具体的实际应用中,根据自己的实验情况,结合推导条件,选择出适合自己实验条件的费米能级公式加以应用。According to the condition of elctroneutrality, formulae of Fermi energy are deduced associated with computation results of electron and void concentration ,when donor and acceptor exist at the same time. and they are discussed based on actual applied condition ,thus computation formulae of Fermi energy in various condition are deduced. Nonapparent formulae deduced are computated on the term of algorithm computation. Formulae of Fermi energy in singledoped semiconductor are discussed in the end .These results can be choosed properly when applied. Formulae deduced, associated with special material , are computated through algorithm computation at first , then they are compared with experimental results. It is found that values of computation meet experimental values well, so these theories are proved to be correct. In special application according to experimental condition , Fermi energy that suit experimental condition are choosed together with deduction condition when applied.

关 键 词：混合杂质 费米能级 数值计算 电中性条件 

分 类 号：TN301[电子电信—物理电子学]