LSI/VLSI中缺陷、杂质与器件性能的关系  

The Relations of Device Performances with Impurities and Defects in LSI/VLSI

作　　者：胡才雄 

机构地区：[1]上海有色金属研究所,上海201600

出　　处：《上海金属（有色分册）》1992年第1期47-51,共5页

摘　　要：结合器件工艺的失效分析,评述了硅中缺陷和氧、碳、金属杂质与器件性能、器件工艺之间的相互关系。指出:杂质和缺陷对器件的性能、成品率和可靠性有严重的影响,尤其经金属杂质缀饰的缺陷对器件的危害更大。对硅中某些杂质和缺陷的最新研究进展作了介绍。Combining with the invalidation of device technology, the relations of devices performances and device technology with the defects and impurities such as oxygen, carbon and metals in silicon are discussed. It is indicated that impurities and defects have serious influence on performances, rate of finished products and reliability of devices, and the defects decorated with metal impurities have even greater damages. The new progresses in researches on some defects and impurities in silicon are introduced.

关 键 词：硅 吸除 器件性能 缺陷 杂质 

分 类 号：TN304.12[电子电信—物理电子学]