四方品系晶体的Bridgman法生长的稳态数值模拟  

Numerical Simulation of Bridgman Method for Tetragonal System

作　　者：张海斌[1] 沈定中[1] 任国浩[1] 邓群[2] 

机构地区：[1]中国科学院上海硅酸盐研究所,上海200050 [2]通用电器公司中国研发中心,上海200555

出　　处：《人工晶体学报》2003年第5期455-459,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(No.59732040)

摘　　要：本文对四方晶系晶体的Bridgman法生长进行了稳态数值模拟。当熔体的导热系数位于晶体横向导热系数和纵向导热系数中间的一小段时,将产生“W”形固液界面。通过比较,指出不同导热系数组合时晶体生长的难易。当熔体的导热系数位于晶体横向导热系数和纵向导热系数中间的一小段时,界面平坦,容易长出较好质量的晶体。对中、低级晶系的生长,晶体横向导热系数应大于纵向导热系数。Bridgman method for tetragonal system was investigated by numerical simulation. If the conductivity of melt lies in middle segment between the conductivity along transverse direction of crystal and the conductivity along longitudinal direction of crystal, there would be a ' W'-shaped solid-liquid interface, and the inferface would be much flatter. In this case, it is easy to grow high quality crystal. To the growth of low and middle class crystal, the conductivity along transverse direction of crystal should be bigger than that along longitudinal direction of crystal.

关 键 词：四方晶系晶体 BRIDGMAN法 晶体生长 稳态数值模拟 导热系数 

分 类 号：O78[理学—晶体学]