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作 者:秦连杰[1] 孟宪林[2] 杜晨林[2] 祝俐[2] 徐炳超[2] 夏海瑞[3] 徐惠忠[1] 姜付义[1] 程秀凤[2] 赵朋[3]
机构地区:[1]烟台大学环境工程和材料学院,烟台264005 [2]山东大学晶体材料国家重点实验室,济南250100 [3]山东大学理学院,济南250100
出 处:《人工晶体学报》2003年第5期502-507,共6页Journal of Synthetic Crystals
摘 要:中频感应加热提拉法生长了低钕掺杂的GdVO_4晶体,用机械分析仪来测量Nd:GdVO_4晶体的热膨胀系数,沿c方向的热膨胀系数为7.42×10^(-6)/K,而沿α方向的热膨胀系数只有1.05×10^(-6)/K,比同比Nd_(0.0045)Y_(0.9946)VO_4晶体样品测量结果小。差示扫描热计法测量了Nd:GdVO_4晶体的比热,298K时为0.52J/g·K。首次用激光脉冲法测量了Nd:GdVO_4晶体的室温热导率。实验表明,Nd:GdVO_4晶体沿<001>方向的热导率数值达11.4W/m·K,比Nd:YAG晶体高(测得10.7W/m·K),其<100>方向的热导率为10.1W/m·K。激光实验显示在较高功率泵浦激光输出上Nd:GdVO_4晶体具有比Nd:YVO_4晶体更加优良的性能。A new liquid-phase method synthesizing Nd: GdVO4 polycrystalline materials was introduced and high optical quality low Nd doped GdVO4 single crystals were successfully grown by the Czochralski method. The specific heat and the thermal expansion of the Nd:GdVO4 crystal were also introduced in this paper. The specific heat of the Nd: GdVO4 crystal was measured to be 0. 52J/g· K at 298K. The thermal expansion coefficient along < 100 > orientation is only about 1.05 × 10-6/K while that along < 001 > orientation is 7.42×10-6/K. The thermal conductivities of the Nd:GdVO4 crystal at 298K were measured by the laser pulse method. The value of the Nd = GdVO4 crystal along <001 > direction is 11.4W/m·K, which is higher than that of the Nd: YAG crystal measured to be 10.7W/m·K. Laser experiments have proved that the Nd: GdVO4 crystal has more excellent laser properties than the Nd: YVO4 crystal in the field of the comparative high-power laser.
关 键 词:ND:GDVO4 热常数 测量 激光性能 掺钕钒酸钆晶体 热导率 比热 热膨胀 晶体生长
分 类 号:TN244[电子电信—物理电子学] O73[理学—晶体学]
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