Tb:YAl_3(BO_3)_4晶体的生长与光谱性质  

Growth and Spectral Properties of Tb:YAl_3(BO_3)_4 Crystal

作　　者：李静[1] 王继扬[1] 胡晓波[1] 程绣风[1] 刘耀岗[1] 孔海宽[1] 

机构地区：[1]山东大学晶体材料国家重点实验室,济南250100

出　　处：《压电与声光》2003年第5期393-395,共3页Piezoelectrics & Acoustooptics

基　　金：国家基础研究发展规划资助项目(G1998061403)

摘　　要：采用助溶剂法成功地生长了Tb:YAl_3(BO_3)_4晶体。测量了晶体的室温透过谱和荧光光谱。晶体的透光波段较宽,紫外截止吸收边在230nm附近。实验表明,在一定能量光的激发下,晶体在485nm、542nm、590nm、622nm处可产生强弱不同的发射谱峰。在542nm处最强,对应于Tb^(3+)的~5D_4→~7F_5发射。Tb:Al_3(BO_3)_4晶体的比热为0.755 0Single crystal of Terbium-doped yttrium alumium tetraborate Tb:YAl3(BO3)4,(Tb:YAB) has been grown by the flux method. The transmittance spectrum and fluorescence spectrum of Tb3+:YAl3(BO3)4 crystal are measured at room temperature. The position of cutoff edge is at 230 nm. Four emission transitions located at 485 nm,542 nm,590 nm and 622 nm are observed. The green emission transitions(5D4→7F5) at 542 nm is more intense than other transitions. The data of the specific heat is obtained, which, at room temperature is 0. 755 0 J/g.℃.

关 键 词：助溶剂法 Tb:YAl3(BO3)晶体 光谱性能 

分 类 号：O782[理学—晶体学]