Strong Electronic Excitation Effect of Thin C_(60) Films Induced by 2.0 GeV Xe Ions  

作　　者：JinYunfan TianHuixian XieErqing LiuJie WangZhiguang SunYumei ZhuZhiyong 

机构地区：[1]不详 [2]PhysicsDepartment,LanzhouUnlverslty,LanzhouChina

出　　处：《近代物理研究所和兰州重离子加速器实验室年报：英文版》2002年第1期45-46,共2页IMP & HIRFL Annual Report

基　　金：Supported by the NSFC and Foundation of the CAS.

摘　　要：In this paper we present experimental results on strong electronic excitation effects of thin C60 films induced by 2.0 GeV 136Xe. The C60 films were prepared by vacuum evaporation onto Al foils. The C60 layers on Al foils were arranged as a foil stack. The total thickness of every stack was lower than the mean projected range of the Xe ions in C60 layers plus Al foils to avoid implantation effect at the end of the ions range. The

关 键 词：氙离子 强电子激发效应 X射线分析 拉曼光谱技术 重离子核物理 薄膜晶体 

分 类 号：O571.6[理学—粒子物理与原子核物理]