纳米晶体管研究进展  

Progress in study of nanotransistors

作　　者：张邦维[1] 

机构地区：[1]湖南大学应用物理系,湖南长沙410082

出　　处：《微纳电子技术》2003年第12期7-15,共9页Micronanoelectronic Technology

摘　　要：纳米晶体管是尺寸小于100nm的晶体管。纳米晶体管大大提高了晶体管、集成电路、计算机以及其他电子器件的性能。Intel公司正在进行50nm以下Si晶体管的研制,他们研制的THzCMOS平面晶体管克服了小尺度给纳米晶体管制作所带来的诸如栅极漏电流、关闭状态下的漏电流、电阻增加以及开通电压升高等一系列困难。目前,Si纳米晶体管的小型化并没有停止的趋势,除此以外,碳纳米管晶体管、Mott转变纳米晶体管以及有机纳米晶体管都在受到大力关注和正在研制之中。The scale of a nanotransistor is less than100nm in size.Nanotransistor can promote greatly the behaviors and properties of the transistor,IC,computer and other electronic devices.As a representative,Intel Corporation is studying the sub-50-nm Si nanotransistors,and when they developed THz CMOS planar transistors,they overcame a lot of difficulties such as gate leakage current ,off-state leakage,resistance enhanced and higher operation voltage.Up to date the trend of small-scale transistor is still not stopped.Besides the Si nanotransistor,non-Si transistors,such as carbon nanotube transistor,Mott transition nanotransistor and nanoscale organic transistor are all paid particular attention,and studied.

关 键 词：Si纳米晶体管 碳纳米管晶体管 Mott转变纳米晶体管 有机纳米晶体管 

分 类 号：TN32[电子电信—物理电子学]