等离子体刻蚀过程中有害气体净化的原理和方法  

The Principle and Methods of Cleaning Noxious and Corrosive Gases in Plasma Etching Process

作　　者：黄光周[1] 马国欣[1] 于继荣[1] 杨英杰[1] 周仲浩[1] 

机构地区：[1]华南理工大学电子与信息学院,广东广州510640

出　　处：《真空电子技术》2003年第5期32-34,共3页Vacuum Electronics

基　　金：国家自然科学基金资助项目(60071032和697710515)

摘　　要：　叙述了等离子体刻蚀过程中产生的有害气体以及处理这些有害气体的原理和方法。对燃烧分解、化学中和、薄膜吸气、等离子体净化及脉冲电晕放电等作了简要的概述。指出等离子体净化和脉冲电晕放电是净化有害气体的较好方法。The harmful gases produced in plasma etching process, and the principle and methods of cleaning them are described in this article. The combustion decomposition, chemical neutralization, film absorption, plasma cleaning and pulsed corona discharge are also introduced. It is pointed out that the plasma cleaning and the pulsed corona discharge are the better methods to get rid of harmful gases.

关 键 词：半导体 等离子体 有害气体 环境保护 

分 类 号：TN405.982[电子电信—微电子学与固体电子学]