微光管GaAs阴极激活铯源材料放气成分质谱分析  

Mass Spectrum Analysis of the Gas Composition Released from Low Light Level Tube GaAs Cathode Activation Cesium Source Materials

作　　者：徐江涛[1] 

机构地区：[1]西安应用光学研究所,陕西西安710100

出　　处：《真空电子技术》2003年第5期77-79,共3页Vacuum Electronics

摘　　要：　运用四极质谱计对微光管GaAs阴极激活铯源材料除气时释放的残气进行分析,发现受污染铯放气成分主要是C,CO,CO2,CxHy等残气,它们是使GaAs阴极灵敏度低的主要原因。通过对铯源除气工艺改进,实现了原子级纯净铯获得。并研制出了主要性能合格的微光夜视成像器件。The gas composition released from cesium source materials of GaAs cathode was analyzed with a quadrupole mass spectrometer.It has been found that the main composition of the residual gas from the contaminated cesium materials includes C,CO,CO2,CxHy,and it is the main reason that causes low sensitivity of GaAs cathode.Through improvements on cesium source outgassing technology,we can obtain a clean cesium cathode and produce qualified lowlight level night vision devices.

关 键 词：微光管 GaAs阴极 铯源材料 残气分析 纯净铯 

分 类 号：TN107[电子电信—物理电子学]