L波段宽带低温低噪声放大器的设计与测量  

Design and Measurement of L Band Broadband Cryogenic Low Noise Amplifier

作　　者：何川[1,2] 王自力[1,2] 王生旺[1,2] 吴志华[1,2] 刘玲玲[1,2] 

机构地区：[1]中国电子科技集团公司超导电子技术重点实验室,合肥230043 [2]中国电子科技集团公司第16研究所,合肥230043

出　　处：《微波学报》2015年第6期54-58,共5页Journal of Microwaves

基　　金：国家自然科学基金(11473060)

摘　　要：高电子迁移率晶体管（HEMT）的小信号等效电路低温模型是研制致冷低噪声放大器（LNA）与研究晶体管微波特性的基础。该文通过测量HEMT器件在低温环境下直流参数与散射参数（S参数）,构建了包含噪声参量的小信号等效电路,并据此设计了一款覆盖L波段的宽带低温低噪声放大器（LNA）,工作频率12GHz,相对带宽达到66.7%。在常温下放大器功率增益大于28d B,噪声温度小于39K;当环境温度制冷至11K时,噪声温度为1.93.1K,输入输出端口的回波损耗S11和S22均优于-10d B,1d B压缩点输出功率为9.2d Bm,功耗仅为54m W。The knowledge of the small-signal equivalent circuit cryogenic model of high electron mobility transistors( HEMT) is crucial for the design of cooled low-noise amplifiers( LNA) and is very useful to support the analysis of the transistor microwave performance. This paper describes a method for designing cryogenic L band amplifiers with very low noise for the 1 ~ 2 GHz frequency range,the design is based on measured cryogenic direct current and scattering-parameters combined with a small-signal noise model. At room temperature,the HEMT amplifier achieved a power gain greater than 28 d B and a maximum noise figure of 39 K. When cooled to 11 K,the noise temperature can be reduced to1. 9 ~ 3. 1K,input and output return loss of better than- 10 d B,and 1d B compress point output power 9. 2d Bm with a total power consumption of54 m W.

关 键 词：低噪声放大器 低温 高电子迁移率晶体管 小信号模型 噪声温度 

分 类 号：TN722.3[电子电信—电路与系统]