液态源雾化化学沉积法制备(Pb,La)TiO_3薄膜  

DEPOSITION OF (Pb,La)TiO_3 FILM BY LIQUID SOURCE MISTED CHEMICAL DEPOSITION

作　　者：张之圣[1] 曾建平[1] 胡明[1] 李小图[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《硅酸盐学报》2003年第6期556-559,共4页Journal of The Chinese Ceramic Society

摘　　要：研究了在Pt/Ti/SiO2 /Si基片上用液态源雾化化学沉积法制备镧钛酸铅 [(Pb ,La)TiO3,PLT]薄膜的工艺 ,并分析了各种因素对其相结构的影响。采用金属有机物热分解工艺的先体溶液 ,在沉积阶段 ,用超声波将先体溶液雾化 ,产生微米级的汽雾 ,由载气 (Ar)引入沉积室进行沉积 ,并在沉积室进行预热处理。重复上述过程 ,直到膜厚达到要求 ,再进行退火处理得到均匀、致密的薄膜。此工艺各项参数如下 :沉积前沉积室内气压为 4× 10 - 3Pa ;沉积时沉积室内气压为 8× 10 3～ 9× 10 3Pa ,沉积时基片温度为 2 0～ 2 5℃ ;预处理温度为 30 0℃ ;最佳热处理温度为 60 0℃ ;超声雾化器工作频率为 1.7MHz;薄膜沉积速率为 3nm/min。XRD和SEM图分析说明 。Pb,La)TiO 3 (PLT) thin film was grown on Pt/Ti/SiO 2/Si substrate by liquid source misted chemical deposition (LSMCD) and the factors affecting the micrograph are analyzed . In the LSMCD process the precursor mist generated from the liquid precursor by an ultrasonic transducer is carried into the deposition chamber using Ar and deposited to the substrate, where thermal preparing is preformed. This procedure is repeated for several times to produce the desired film thickness. The uniform and compact thin film is gained after annealing. The parameters obtained from the process are as follows respectively. Chamber pressure prior to deposition is 4×10 -3Pa. Chamber pressure during deposition is 8-9×10 3 Pa. The substrate temperature during deposition is 20-25 ℃. Temperature of thermal preparing is 300 ℃. The optimum annealing temperature is 600 ℃. Working frequency of the humidifier is 1.7 MHz. Deposition speed is 3 nm/min. Characterized by XRD and SEM, the crystalline phase of the LSMCD-derived PLT films demonstrates the structure of perovskite phase.

关 键 词：镧钛酸铅 液态源雾化化学沉积 薄膜 X射线衍射 

分 类 号：TN304.055[电子电信—物理电子学]