高线性度CMOS射频AB类功率放大器设计  

CMOS RF Class AB Amplifier Design with High Linearity

作　　者：陈晓飞[1] 沈军[1] 张力[1] 林双喜[2] 

机构地区：[1]华中科技大学光学与电子信息学院,湖北武汉430074 [2]武汉工程大学电气信息学院,湖北武汉430073

出　　处：《微电子学与计算机》2014年第6期145-148,共4页Microelectronics & Computer

基　　金：国家自然科学基金项目(61076030)

摘　　要：CMOS射频AB类功率放大器广泛应用于单片集成无线芯片内.采用恒定最大电流的方法对其效率进行分析,采用归一化输入电压的方法对其线性度进行分析.利用AB类功率放大器系统增益的非线性与CMOS跨导非线性相互补偿,提高了CMOS射频AB类放大器的线性度.基于TSMC 0.18μm CMOS混合信号工艺,设计了一款两级射频AB类功率放大器.该射频功率放大器差动输入,单端输出,工作频段为804~940MHz,工作电压为3V.仿真指标为:增益为11dB,输出1dB压缩点为17.2dBm,OIP3为18.2dBm,附加效率为37%.CMOS radio frequency class AB power amplifiers are widely used in single chip wireless solutions . Efficiency is analyzed under constant maximum current and linearity analysis by using normalization method of input voltage .High linearity is achieved with the compensation between system gain and MOS transconductance ,both are nonlinear .A two stage RF class AB power amplifier is designed based on TSMC 0 .18 μm CMOS mixed-signal process .With a differential input and a signal-end output ,this RF power amplifier works in the frequency band of 804~940 M Hz under operating voltage of 3 V .Simulation shows :the gain is 11 dB ,the P1 dB is 17 .2 dBm ,the OIP3 is 18 .2 dBm and the PAE is 37% .

关 键 词：AB类 射频功率放大器 CMOS 线性度 效率 

分 类 号：TN722.75[电子电信—电路与系统]