高稳定性灵敏放大器的电路设计  

Circuit Design of Sense Amplifier with High Robustness

作　　者：李鑫[1] 钟汇才[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《微电子学与计算机》2014年第11期148-151,共4页Microelectronics & Computer

摘　　要：随着半导体工艺节点进入微纳尺度,微弱的位线电流和较大的器件参数偏差成为制约读取电路速度和良率的主要因素,由此提出了基于电流采样技术的灵敏放大器,能够在器件参数失配较为严重、位线电流很小的场合下快速稳定的工作.在Silterra 0.13μm C13GCMOS工艺下,采用Spectre工具对电路进行仿真,结果表明:在电源电压为0.8V、位线电流和参考电流分别为150nA和100nA时,读取过程能够在4ns内完成,电路可以用于低电压、低功耗存储器的数据读出.As the device dimension scales into the nanometer era ,the read-out circuits suffer from slow read speed or low yield for the reduced bit-line current and device mismatches .The proposed CMOS Current-Sampling-Based SA can overcome the effect of the device mismatches and operate correctly at a desired speed even if the bit-line current is very weak .The circuit is realized in Silterra 0 .13 μm C13G CMOS technology and simulation results show that the random read-out can be finished in 4 ns when the supply voltage is 0 .8 V with the cell current and reference current are 150 nA and 100 nA ,respectively .

关 键 词：参数失配 锁存 电流采样 灵敏放大器 

分 类 号：TN722[电子电信—电路与系统]