一种高电源抑制比带隙基准源  

A high PSRR bandgap reference

作　　者：周志兴 来强涛[1] 姜宇[1] 郭江飞[1] 王成龙 陈腾 郭桂良[1] ZHOU Zhi-xing;LAI Qiang-tao;JIANG Yu;GUO Jiang-fei;WANG Cheng-long;CHEN Teng;GUO Gui-liang(Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;University ofChinese Academy of Sciences,Beijing 100049,hina;School of Microelectronics,University of Chinese Academy of Sciences,Beijing 100029,China)

机构地区：[1]中国科学院微电子研究所,北京100029 [2]中国科学院大学,北京100049 [3]中国科学院大学微电子学院,北京100029

出　　处：《微电子学与计算机》2019年第5期1-4,9,共5页Microelectronics & Computer

基　　金：国家自然科学基金(61501453)

摘　　要：介绍了一种高电源抑制比的带隙基准电路.本文采用改进的威尔逊电流镜结构和负反馈技术设计了一种新型的稳压电路,为带隙基准提供电源和偏置,实现了高电源抑制比.结果表明,在-40℃～150℃温度范围、3.5 V～6 V的电源电压范围内,该带隙基准的温度系数为15 ppm/℃.带隙基准源的电源抑制比在直流处和1 kHz处分别为-125 dB、-106 dB.A power supply rejection ratio(PSRR)Bandgap reference was introduced.In order to improve the PSRR,this paper proposed a novel voltage stabilizing circuit based on an improved Wilson current mirror structure and feedback technology,which provides power and bias for bandgap reference.The results show that the bandgap reference featured a temperature coefficient of 15 ppm/℃at a input voltage range from 3.5 V to 6 V,a PSRR of-125 dB,-106 dB at direct-current,1 kHz respectively.

关 键 词：带隙基准源 电源抑制比 稳压电路 

分 类 号：TN432[电子电信—微电子学与固体电子学]