Growth and optical characteristics of ZnCdSe/ZnSe QWs on Si substrate with ZnO buffer  

作　　者：王晓华 范希武 单崇新 张吉英 张振中 吕有明 刘益春 贾中元 钟景昌 申德振 

机构地区：[1]Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics,Chinese Academy of Sciences, Changchun 130033 [2]National Key Laboratory of High Power Semiconductor Laser,Changchun University of Science and Technology, Changchun 130022 [3]College of Electronic Science and Engineering, Jilin University, Changchun 130023 [4]National Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022

出　　处：《Chinese Optics Letters》2003年第11期668-670,共3页中国光学快报（英文版）

基　　金：This research was supported by the National Fundamental and Applied Research Project; The Key Project of the National Natural Science Foundation of China (No. 69896260);the Innovation Project Item, Chinese Academy of Sciences, the Program of CAS Hundred

摘　　要：In this paper, the growth and characteristics of ZnCdSe/ZnSe quantum wells (QWs) prepared on ZnO-Si (111) templates are reported. An oriented ZnO thin film with a smooth surface was employed to be the buffer layer for the ZnCdSe/ZnSe QWs growth. Scanning electron microscopy (SEM) patterns showed that the ZnO buffer layer improved the smoothness of the ZnCdSe/ZnSe sample. Up to the 3rd longitudinal optical phonon of Zn0.56Cd0.44Se observed in Raman spectra suggests that the crystal quality of ZnCdSe/ZnSe QWs is reasonably good. The influence of quantum confinement effect on exciton characters of the QWs was also demonstrated.In this paper, the growth and characteristics of ZnCdSe/ZnSe quantum wells (QWs) prepared on ZnO-Si (111) templates are reported. An oriented ZnO thin film with a smooth surface was employed to be the buffer layer for the ZnCdSe/ZnSe QWs growth. Scanning electron microscopy (SEM) patterns showed that the ZnO buffer layer improved the smoothness of the ZnCdSe/ZnSe sample. Up to the 3rd longitudinal optical phonon of Zn0.56Cd0.44Se observed in Raman spectra suggests that the crystal quality of ZnCdSe/ZnSe QWs is reasonably good. The influence of quantum confinement effect on exciton characters of the QWs was also demonstrated.

关 键 词：Semiconductor quantum wells SUBSTRATES 

分 类 号：O431.2[机械工程—光学工程]