微测热辐射计氧化钒薄膜工艺研究  

DEPOSITION PROCESS STUDY OF VANADIUM OXIDE THIN FILMS FOR MICROBOLOMETER

作　　者：许旻[1] 崔敬忠 贺德衍[1] 

机构地区：[1]兰州大学物理科学技术学院,甘肃兰州730000 [2]兰州物理所,甘肃兰州730000

出　　处：《红外与毫米波学报》2003年第6期419-422,共4页Journal of Infrared and Millimeter Waves

摘　　要：用射频磁控反应溅射在石英玻璃和硅片上沉积氧化钒薄膜 .利用X射线衍射 ,X射线光电子谱 ,原子力显微镜 ,分光光度计和电阻测量手段对沉积薄膜结构、形貌和性能进行了测试 .结果表明 ,沉积薄膜的电阻温度系数大于 1.8% /℃ ,方块电阻为 2 2± 5kΩ/□ .Vanadium oxide thin films were deposited onto quartz glass and silicon substrates by radio frequency reactive sputtering methods. The surface morphology, structural features and properties of films were studied by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force spectroscopy (AFM), spectrophotometer and resistance measurement methods to ensure the growth of the deposited films. These investigation shown that the deposited thin film has TCR value over 1.8% per degree centigrade and square resistance of 22 +/- 5kOmega/square.

关 键 词：氧化钒薄膜 射频磁控反应溅射法 X射线衍射 原子力显微镜 分光光度计 电阻温度系数 微测热辐射计 

分 类 号：TN213[电子电信—物理电子学]