混合应变多量子阱有源材料及其增益偏振特性  

Mix Strained MQW Active Materal and Its Gain Polarization Characteristic

作　　者：段子刚[1] 

机构地区：[1]深圳大学光电子学研究所

出　　处：《光子学报》2003年第12期1453-1455,共3页Acta Photonica Sinica

摘　　要：采用MOCVD外延交替生长了压应变、张应变InxGa1-xAsyP1- y多量子阱材料 ,对应1.3μm波段 平均应变量 - 0 .16 % ,周期 11nm 采用三个周期外延材料的芯片制作的LD 。Tensile and compressive mix alternant strained MQW materials in 1.3 μm band are made by MOCVD epitaxy. TM polarization mode gain in the LD made by using three periods of the mixed MQWs with -0.16% net strain and 11nm period as active material has been obtained, and double polarization mode lasing simultaneously in the LD has been realized.

关 键 词：SOA 偏振无关 TM模增益 混合应变量子阱 

分 类 号：TN248.4[电子电信—物理电子学]