检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
出 处:《电子器件》2003年第4期418-423,共6页Chinese Journal of Electron Devices
基 金:国家自然科学基金资助项目(60271016)
摘 要:采用二维数值模拟的方法研究了新型荫罩式PDP结构中驱动电压波形的上升(下降)沿对其单元放电特性的影响。分别模拟了寻址期和维持期内驱动电压沿为线性及正弦波形时的放电过程,给出了单元内电位分布变化情况,电子及氙谐振态平均浓度随时间变化的情况。得到了粒子峰值出现时刻与电压波形的上升(下降)沿的关系。The breakdown characteristics of novel shadow mask PDP have been studied for different shape of driving pulse. The two-dimensional fluid model is used in simulation. The variations of average density of electrons and resonant Xenon atoms for different driving pulse are presented in this paper. The distribution of voltage, electron density and resonant Xenon density distributions are also given when the driving pulse is changed. Results show that the time arriving at the peak value of average density changed almost linearly with the edge of pulse. It can be seen that the factor of pulse-edge should be taken into account when the driving circuit is designed.
关 键 词:驱动电压沿 荫罩式PDP(SMPDP) 放电特性 粒子浓度
分 类 号:TN873.94[电子电信—信息与通信工程]
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:216.73.216.229