InGaAlP LED发光特性分析  

Analysis on the Luminous Characteristics of InGaAlP LEDs

作　　者：郑智斌 

机构地区：[1]厦门华联电子有限公司,福建厦门361006

出　　处：《液晶与显示》2003年第6期450-453,共4页Chinese Journal of Liquid Crystals and Displays

摘　　要：InGaAlPLED发光效率高,性能稳定,应用相当广泛。在InGaAlPLED的应用中,发光特性是相当重要的参数,而发光强度和半强度角是LED发光特性的两个主要参数。介绍了不同的InGaAlPLED芯片结构,分析了其发光特点及封装后的发光特性,讨论了不同的反射式支架结构对其发光特性产生的不同影响。InGaAlP LED has the featares of high luminous efficiency, stable property and wide application. Luminous characteristic is a very important parameter in the InGaAlP LED application which consists of two main parameters-luminous intensity and half-intensity angle. This article introduced different chip structures of InGaAlP LED, analyzed its lighting property and luminous characteristic after packaging. It also discussed the effect of different reflective lead frame structure on the luminous characteristic, which has good significance for the InGaAlP LED production and its application.

关 键 词：发光二极管 发光效率 发光强度 铟镓铝磷发光二极管 芯片结构 

分 类 号：TN312.8[电子电信—物理电子学] TN383