多孔硅研究的发展  

Research Development of Porous Silicon

作　　者：王晓静[1] 李清山[1] 

机构地区：[1]曲阜师范大学物理系,山东曲阜273165

出　　处：《液晶与显示》2003年第6期421-427,共7页Chinese Journal of Liquid Crystals and Displays

基　　金：山东省自然科学基金资助项目(Y2002A09)

摘　　要：多年来,人们对多孔硅的制备方法、微结构特征及其化学成分、发光特性以及发光机制等方面做了深入的研究和探讨,文章对这几个方面的研究工作做了介绍,并对目前的研究状况和应用研究中存在的问题进行了分析。制备出均匀性好、发光效率高、性质稳定、机械强度较高的多孔硅是促进其实用化进程的基本途径。人们对多孔硅进行大量研究的目的主要在于获得硅发光集成装置,另外多孔硅的应用研究也体现在光电子器件、光学器件和传感器件3个方面。多孔硅在微电子学、晶片机械加工、生物工艺学等领域也具有潜在的应用价值。Some properties of porous silicon have been extensively investigated and discussed for many years, for instance, prepared methods, microstructure and chemical component, photoluminescence characteristics and mechanism, etc. The development of research was summarized in this paper. In addition, study status of PS at present was addressed and application problems in some fields were analyzed.To fabricate the porous silicon with high efficient luminescence,stable properties and higher mechanical robustness,is the basic approach to accelerating its application. The target to study porous silicon is to gain luminescence-integrated device. In addition, porous silicon application study is mostly in three aspects: photoelectron device, optical device and sensing device. Its potential application fields are in microelectronics, wafer technology, biotechnology, etc.

关 键 词：多孔硅 发光特性 发光机制 发光效率 光电子器件 电化学腐蚀法 光化学腐蚀法 晶体机构 

分 类 号：O734.3[理学—晶体学]