CMOS放大器的温度补偿偏置  

Temperature Compensation of CMOS Amplifiers with Constant-g_m Biasing

作　　者：宋琦明[1] 陈志恒[1] 李文渊[1] 

机构地区：[1]东南大学射频与光电集成电路研究所,江苏南京210096

出　　处：《微电子技术》2003年第6期16-18,共3页Microelectronic Technology

摘　　要：受载流子迁移率、阈值电压等参数的温度特性的影响 ,CMOS放大器往往具有较差的温度稳定性。本文介绍了一种基于恒跨导参考电流源偏置电路的温度补偿技术 ,理论分析和电路模拟结果显示 。Due to the effect of temperature variation on the carrier mobility, the threshold voltage and other parameters about process and device, the temperature stability of CMOS amplifiers is often relatively poor. In this article, a temperature compensation technique for CMOS amplifiers using constant-gm reference current biasing circuit is presented. The results of theoretical analysis and circuit simulation confirmed the effectiveness of this technique for short-channel MOSFET, in addition to long-channel devices.

关 键 词：CMOS 集成电路 温度系数 放大器 温度补偿 恒跨导偏置 温度稳定性 

分 类 号：TN433[电子电信—微电子学与固体电子学] TN722