支撑光网络发展的硅基光电子技术研究  

Si-based optoelectronic technology for development of optical networks

作　　者：余金中[1] 

机构地区：[1]中国科学院半导体研究所

出　　处：《物理》2003年第12期810-815,共6页Physics

基　　金：国家自然科学基金 (批准号 :698962 60 69990 5 40 );国家重点基础研究发展计划 (批准号 :G2 0 0 0 -0 3 -66);国家高技术研究发展计划 (批准号 :2 0 0 2AA3 12 0 60 )资助项目

摘　　要：作为大规模集成电路和化合物半导体光电子器件的制造技术共同构成的一门高新技术 ,硅基光电子技术越来越受到重视 .文章着重介绍中国科学院半导体研究所外延生长SiGe/Si量子结构和Si基器件研究的结果 :采用自行设计的UHV/CVD系统 ,成功地生长出Ⅱ型SiGe/Si量子阱和量子点 ,直到 2 5 0K仍能观察到自组织生长Ge/Si(0 0 1 )量子点的发光峰 ;研制成功SiGe/Si谐振腔增强型光电二极管 (RCEPD)、Y分支MZI光调制器和多模干涉 -马赫 -曾德干涉型光开关等Si基光电子器件 ;1 .3μm处RCEPD的量子效率达到 4 .2 % ,- 5V偏压下暗电流密度 1 2 pA/ μm2 ;2× 2热光型光开关的响应时间小于 2 0 μs,两输出端关态串扰为 - 2 2dB ,通态串扰为 - 1 2dB .As a new high technology, combing the fabrication techniques of IC and compound optical devices, Si-based optoelectronic technology has become more and more attractive. We present results of studies on Si-based optoelectronics carried out in the Instutute of Semiconductors, CAS, including UHV/CVD epitaxy of SiGe/Ge quantum structures and Si-based optoelectronic devices. Type-ⅡSiGe/Si quantum wells and self-organized dots have been successfully grown, and the photoluminescence spectra from the quantum dots were measured as far as 250K. Several Si-based devices, such as resonant cavity enhanced photodiodes, optical modulators and switches, have been fabricated. The quantum efficiency and dark current density of the photodiodes at 1.3μm are 4.2%and 12pA/μm 2, respectively. The response time of the 2×2 thermal-optical switches is shorter than 20μs, and the turn-on and turn-off cross-talks are -22dB and-12dB, respectively.

关 键 词：全光网络 集成电路 半导体光电子器件 锗化硅/硅量子结构 量子阱 光电探测器 耦合器 

分 类 号：O439[机械工程—光学工程]