Ce掺杂的TiO_2电容-压敏材料结构和电性能研究  

The Microstructure and Electric Properties of TiO_2 Based Capacitor-varistor Multi-function Ceramics Doped Ce

作　　者：孟黎清[1] 李红耘 熊西周 罗绍华[3] 

机构地区：[1]山西大学工程学院建筑工程与管理系材力教研室,山西太原030013 [2]广州新日电子有限公司,广东广州510335 [3]清华大学材料科学与工程系新型陶瓷与精细工艺国家重点实验室,北京100084

出　　处：《电瓷避雷器》2003年第6期38-42,共5页Insulators and Surge Arresters

基　　金：清华大学新型陶瓷与精细工艺国家重点实验室开放课题基金(X.GZ0207)

摘　　要：通过对样品压敏性能、介电性能的测定和晶体结构、表面形貌分析,研究了CeO2对TiO2电容-压敏电阻器的影响。研究发现CeO2对TiO2电容-压敏电阻的性能有显著的影响。在1350℃烧结条件下,0.4%摩尔分数CeO2的样品表现出优良的综合电性能,其压敏电压为15.84V/mm,非线性系数α为4.62,并具有很高的表观介电常数(εr=158600),较低的介电损耗(tgδ=0.32),是一种较有潜力的新型电容-压敏电阻器。A novel(Ce,Nb,Si)-doped TiO_2ceramics seems to be useful as a varistor material.The effect of CeO_2 on Nb-doped TiO_2 based capacitor-varistors was investigated and analyzed by varistor and dielectric measurements, XRD,SEM.It was found that the CeO_2 dopant had significant effect on the varistor properties and dielectric properties of Nb-doped TiO_2 based capacitor-varistors ceramics sintering at 1 350℃.An optimal composition dopant with 0.4% CeO_2 exhibited a low breakdown voltage of 15.84V/mm a nonlinear coefficient of 4.62.The ultrahigh dielectric constant(ε_r=158 6000)as well as relatively low dielectric loss(tgδ=0.32)were found at room temperature.The effects of cerium on the TiO_2 varistor were supported by products of perrierite containing cerium,silicon and titanium.

关 键 词：二氧化钛 压敏电阻器 电容 二氧化铈 

分 类 号：TN379[电子电信—物理电子学]