多晶CdS太阳电池p-n结电容的测量及应用  

MEASUREMENTS OF P-N JUNCTION CAPACITANCE IN POLYCRYSTALLINE CdS SOLAR CELL AND ITS APPLICATION

作　　者：王给祥[1] 王岚[1] 刘波[1] 路冰宇 王兴瑞[1] 

机构地区：[1]中国科学院长春应用化学研究所,长春130022

出　　处：《太阳能学报》1992年第4期340-346,共7页Acta Energiae Solaris Sinica

摘　　要：介绍了p-n结电容测量方法。通过测量C-V特性研究了Cds太阳电池的热处理及上栅过程,分析并讨论了p-n结的变化与电池不稳定的关系。初步研究了扩散电位的测定问题。This paper presents the measurements of p-n junction capacitance in poly-crystalline CdS solar cell. Effects of heat treatment and paste grid in CdS solar cell are investigated by measuring C-V characteristics. This paper analyses and discusses the relationship between the change of p-n junction and the stability of CdS solar cells. The measurements of diffusion potential are also investigated.

关 键 词：太阳能电池 电容 测量 CDS P-N结 

分 类 号：TM914.4[电气工程—电力电子与电力传动]