渐变异质结在HB-LED器件中的应用以及实现技术  

Application of Graded Heterojunction in HB-LED and Its Realizing Technique

作　　者：刘鲁[1] 范广涵[2] 廖常俊[3] 

机构地区：[1]广东轻工职业技术学院机电系,广州510300 [2]华南师范大学信息光电子科技学院光电子材料与技术研究所,广州510631 [3]华南师范大学信息光电子科技学院量子电子研究所,广州510631

出　　处：《量子电子学报》2003年第6期689-698,共10页Chinese Journal of Quantum Electronics

基　　金：广州市科技重点计划资金(1999-z-035-01)

摘　　要：本文首先讨论通过渐变方式使异质结处的尖峰消失或减小,从而改善高亮度发光二极管(HB-LED)的器件性能。讨论在实际中用双层突变拟合缓变异质结遇到的问题.Graded heterojunctions with different grading way and different doping density were analysized to show the spike at the heterojunction which can be removed or decreased to improve the performance of HB-LED. We discussed the problems that were met when we applied the double abrupt-hetero layer to fit the grading heterojunction in HB-LED.

关 键 词：渐变异质结 HB-LED器件 高亮度发光二极管 双层突变拟合 镓铝铟磷 

分 类 号：TN312.8[电子电信—物理电子学]