La_3Ga_5SiO_(14)晶体电光Q开关的研究  

Study on Electro-optic Q Switch of La_3Ga_5SiO_(14) Single Crystal

作　　者：尹鑫[1] 王继扬[1] 张少军[1] 

机构地区：[1]山东大学晶体材料研究所晶体材料国家重点实验室,山东济南250100

出　　处：《中国激光》2004年第1期29-32,共4页Chinese Journal of Lasers

基　　金：国家 973项目 (G19980 6 14 0 3);教育部博士点基金 (2 0 0 2 0 4 2 2 0 0 7)资助课题

摘　　要：模拟旋光晶体在激光腔中作为电光Q开关使用时的工作状态 ,建立了研究旋光晶体电光效应的实验装置。通过对旋光晶体在正交偏光和平行偏光干涉实验中干涉现象的研究 ,得到了旋光晶体在激光腔中作为电光Q开关使用时的最佳构图 ,并将典型的旋光晶体La3 Ga5SiO14By simulating the Q-switch process of the optical activity crystals in the laser cavity, the experiment setup for studying the electro-optic effect of the optical activity crystals is designed. The phenomenon of interference of the optical activity crystals in the perpendicular polarized light and the parallel polarized light is studied. The optimum configuration for the optical activity crystals to be used as the electro-optic Q-switch in the laser cavity is obtained, and the electro-optic Q-switch is made by using the typically optical activity crystal La_3Ga_5SiO_ 14 successfully.

关 键 词：旋光性 电光效应 偏光干涉 电光Q开关 旋光晶体 激光腔 La3Ga5SiO14晶体 

分 类 号：TN243[电子电信—物理电子学]