Concerning the maximum frequency limits of Gunn operators  

作　　者：R F Macpherson G M Dunn Ata Khalid D R S Cumming 

机构地区：[1]Department of Physics,University of Aberdeen [2]School of Engineering,University of Glasgow

出　　处：《太赫兹科学与电子信息学报》2015年第3期389-395,共7页Journal of Terahertz Science and Electronic Information Technology

摘　　要：The length of the transit region of a Gunn diode determines the natural frequency at which it operates in fundamental mode-the shorter the device,the higher the frequency of operation.The long-held view on Gunn diode design is that for a functioning device the minimum length of the transit region is about 1.5μm,limiting the devices to fundamental mode operation at frequencies of roughly 60 GHz.The authors posit that this theoretical restriction is a consequence of limits of the hydrodynamic models by which it was determined.Study of these devices by more advanced Monte Carlo techniques,which simulate the ballistic transport and electron-phonon interactions that govern device behaviour,offers a new lower bound of 0.5μm,which is already being approached by the experimental evidence shown in planar and vertical devices exhibiting Gunn operation at 0.6μm and 0.7μm.It is shown that the limits for Gunn domain operation are determined by the device length required for the transferred electron effect to occur(approximately 0.15μm,which as demonstrated is largely field independent)and the fundamental size of the domain(approximately 0.3μm).At this new length,operation in fundamental mode at much higher frequencies becomes possible-the Monte Carlo model used predicts power output at frequencies over 300 GHz.The length of the transit region of a Gunn diode determines the natural frequency at which it operates in fundamental mode-the shorter the device,the higher the frequency of operation.The long-held view on Gunn diode design is that for a functioning device the minimum length of the transit region is about 1.5μm,limiting the devices to fundamental mode operation at frequencies of roughly 60 GHz.The authors posit that this theoretical restriction is a consequence of limits of the hydrodynamic models by which it was determined.Study of these devices by more advanced Monte Carlo techniques,which simulate the ballistic transport and electron-phonon interactions that govern device behaviour,offers a new lower bound of 0.5μm,which is already being approached by the experimental evidence shown in planar and vertical devices exhibiting Gunn operation at 0.6μm and 0.7μm.It is shown that the limits for Gunn domain operation are determined by the device length required for the transferred electron effect to occur(approximately 0.15μm,which as demonstrated is largely field independent)and the fundamental size of the domain(approximately 0.3μm).At this new length,operation in fundamental mode at much higher frequencies becomes possible-the Monte Carlo model used predicts power output at frequencies over 300 GHz.

关 键 词：GUNN DIODE MONTE Carlo THEORETICAL limits Ga N 

分 类 号：TN31[电子电信—物理电子学]