一种应用于太赫兹频段的平面In_(0.53)Ga_(0.47)As耿氏二极管  

Design and fabrication of planar In_(0.53)Ga_(0.47)As Gunn diode for terahertz wave application

作　　者：安宁[1] 曾建平[1] 李志强[1] 刘海涛[1] 唐海林[1] AN Ning;ZENG Jianping;LI Zhiqiang;LIU Haitao;TANG Hailin(Microsystem and Terahertz Research Center,China Academy of Engineering Physics,Chengdu Sichuan 610200,China)

机构地区：[1]中国工程物理研究院微系统与太赫兹研究中心,四川成都610200

出　　处：《太赫兹科学与电子信息学报》2017年第5期697-701,共5页Journal of Terahertz Science and Electronic Information Technology

摘　　要：介绍了一种InP衬底上的平面In_(0.53)Ga_(0.47)As耿氏二极管的设计、制作和测试方法。为了提高器件的输出功率,使用Advanced Design System 2011仿真软件设计了50Ω共面波导馈电结构作为器件电极,减少测试功率损耗;同时在版图设计时加大了金属电极面积,改善器件的散热效果。测试结果表明,当所加电压为4.4 V时,沟道长度和宽度分别为2μm和120μm器件的基波振荡频率为168.3 GHz,输出功率为-5.21 dBm。这种高功率平面结构耿氏二极管在太赫兹频段具有巨大的应用潜力。Fabrication and measurement of the In0.53 Ga0.47 As based planar Gunn diodes on the InP semi-insulating substrate is presented.In order to increase the RF output power of the planar Gunn devices,the planar Gunn diode is designed in 50ΩCo-Planar Wave(CPW)guide format,which is designed using the Advanced Design System(ADS-2011).Meanwhile,increasing the area of the metal pads can improve the heat dissipation.For a 120μm wide device with a 2μm channel length,experimental results show a fundamental oscillation frequency of 168.3 GHz with a RF output power of-5.21 dBm.These planar Gunn devices show great potential as solid-state THz signal sources.

关 键 词：太赫兹 In0.53Ga0.47As 平面耿氏二极管 振荡频率 

分 类 号：TN31[电子电信—物理电子学]