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作 者:Xing-Kai Duan Kong-Gang Hu Da-Hu Ma Wang-Nian Zhang Yue-Zhen Jiang Shu-Chao Guo
出 处:《Rare Metals》2015年第11期770-775,共6页稀有金属(英文版)
基 金:financially supported by the National Natural Science Foundation of China (No. 51161009);the Research Project of Jiangxi Provincial Education Department (No. GJJ13722 and GJJ11615)
摘 要:The Bi0.5Na0.02Sb1.48-xInxTe3alloys(x =0.02-0.20) were synthesized by vacuum melting and hot pressing methods at 753 K,60 MPa for 30 min.Effects of Na and In dual partial substitutions for Sb on the thermoelectric properties were investigated from 300 to 500 K.Substituting Sb with Na and In can enhance the Seebeck coefficient effectively near room temperature.The electrical resistivity of the Na and In dual-doping samples is higher within the whole test temperature range.The Bi0.5Na0.02Sb1.48-xInxTe3samples(x = 0.02,0.06) play a great role in optimizing the thermal conductivity.As for the Bi0.5Na0.02Sb1.46In0.02Te3alloy,the minimum value of thermal conductivity reaches 0.53 W·m-1·K-1at 320 K.The thermoelectric performance of the Na and In dualdoped samples is greatly improved,and a figure of merit ZT of 1.26 is achieved at 300 K for the Bi0.5Na0.02Sb1.42In0.06Te3,representing 26%enhancement with respect to ZT = 1.0 of the undoped sample.The Bi0.5Na0.02Sb1.48-xInxTe3alloys(x =0.02-0.20) were synthesized by vacuum melting and hot pressing methods at 753 K,60 MPa for 30 min.Effects of Na and In dual partial substitutions for Sb on the thermoelectric properties were investigated from 300 to 500 K.Substituting Sb with Na and In can enhance the Seebeck coefficient effectively near room temperature.The electrical resistivity of the Na and In dual-doping samples is higher within the whole test temperature range.The Bi0.5Na0.02Sb1.48-xInxTe3samples(x = 0.02,0.06) play a great role in optimizing the thermal conductivity.As for the Bi0.5Na0.02Sb1.46In0.02Te3alloy,the minimum value of thermal conductivity reaches 0.53 W·m-1·K-1at 320 K.The thermoelectric performance of the Na and In dualdoped samples is greatly improved,and a figure of merit ZT of 1.26 is achieved at 300 K for the Bi0.5Na0.02Sb1.42In0.06Te3,representing 26%enhancement with respect to ZT = 1.0 of the undoped sample.
关 键 词:MICROSTRUCTURE Dual doping Hot pressing Thermal co
分 类 号:TG243[金属学及工艺—铸造] TG306[一般工业技术—材料科学与工程] TB34
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