INCREASING BREAKDOWN VOLTAGE OF LDMOST USING BURIED LAYER  

作　　者：Han Lei Ye Xingning Chen Xingbi (Institute of Microelectronics, University of Electrical Science and Technology of China,, Chengdu 610054) 

出　　处：《Journal of Electronics(China)》2003年第1期29-32,共4页电子科学学刊（英文版）

基　　金：Supported by the National Natural Science Foundation of China(No.69776041)

摘　　要：A new LDMOST structure, named B-LDMOST that has a buried layer under the drain is proposed. The buried layer is not connected to the drift region, so it can optimize the vertical field distribution and increase breakdown voltage. The analysis and the simulated results show that B-LDMOST can increase breakdown voltage, with almost negligible influence on the other parameters such as on-resistance, switching time, and so on.A new LDMOST structure, named B-LDMOST that has a buried layer under the drain is proposed. The buried layer is not connected to the drift region, so it can optimize the vertical field distribution and increase breakdown voltage. The analysis and the simulated results show that B-LDMOST can increase breakdown voltage, with almost negligible influence on the other parameters such as on-resistance, switching time, and so on.

关 键 词：B-LDMOST Buried layer Breakdown voltage Ou-resistance Switching time 

分 类 号：TN405[电子电信—微电子学与固体电子学]