X射线存储材料Si^(4+)掺杂BaFBr:Eu^(2+)中电子陷阱的研究(英文)  

Electron Traps in Si^(4+)-doped BaFBr∶Eu^(2+) X-ray Storage Phosphor

作　　者：郑震[1] 熊光楠[1] 余华[2] 张丽平[1] 马宇平[1] 程士明[3] 严晓敏[3] 

机构地区：[1]天津理工大学材料物理研究所,天津300191 [2]南开大学物理学院,天津300071 [3]复旦大学分析测试中心,上海200433

出　　处：《光电子．激光》2004年第1期116-119,共4页Journal of Optoelectronics·Laser

基　　金：ProjectsupportedbyTianjinKeyDisciplineofPhysicsandChemistry

摘　　要：在BaFBr:Eu2 + 中掺入Si4+ 合成了一种新的X射线影像板材料 ,其主要光激励发光 (PSL)性能 ,如射线敏感度和长波可激发性都优于低价阳离子掺杂的BaFBr∶Eu2 + 。用喇曼和顺磁共振 (EPR)等手段表征了掺Si4+ 后BaFBr∶Eu2 + 中电子陷阱的结构 ,并根据此结构解释了其激发波长的红移量比其它低价阳离子掺杂都高的原因。Samples of BaSiFBr∶Eu^(2+) were synthesized and their photo-stimulated luminescence(PSL) properties were measured.It was found that this new phosphor is more radiation sensitive and longer wavelength photo-stimulable than BaFBr∶Eu^(2+) and its lower-valence cation doped derivatives.By using Raman scattering Ba^(2+) vacancies and Si^(4+) were characterized.Electron paramagnetic resonance(EPR) was also used to investigate electron traps in the phosphor.At last,the transition of excited state of electrons in the perturbed electron traps was discussed to interpret the red shift of the stimulating spectrum.

关 键 词：X射线存储材料 Si^4+ BAFBR:EU^2+ 电子陷阱 红移 光激励发光 X射线影像板材料 

分 类 号：O482[理学—固体物理]