导电聚合物MEH-PPV表面光电特性的研究  

Surface photoelectric characteristics of conducting polymer MEH-PPV

作　　者：黄宗浩[1] 孙海珠[1] 张文[1] 杨继华[1] 

机构地区：[1]东北师范大学化学学院,吉林长春130024

出　　处：《材料科学与工艺》2003年第4期383-385,共3页Materials Science and Technology

基　　金：吉林省科技厅科技发展资助项目(2002618)

摘　　要：用接触电位差(CPD)方法研究了导电聚合物MEH-PPV薄膜的光电特性.测得MEH-PPV的能隙为2 1eV,表面功函数为4 7-4 8eV,是p型导电材料.同时研究了不同铸膜溶剂对薄膜光电特性的影响.测得由不含芳环的四氢呋喃为溶剂制得的薄膜表面功函数比由含芳环的氯苯为溶剂制得的薄膜低0 15eV.The photoelectric characteristics of conducting polymer MEH-PPV thin film were studied using contact potential difference (CPD) method. The energy gap and the surface work function (SWF) of MEH-PPV thin film were determined as 2.1 eV and 4.7-4.8 eV, respectively; and the p-type conducting characteristic of film was determined, too. Meanwhile the influence of different coating solvents on photoelectric characteristic of thin film was investigated, and the result indicates that the SWF of film coated from tetrahydrofuran (THF) is 0.15 eV lower than that from chlorobenzne (CB) solution.

关 键 词：接触电位差法 CPD 导电聚合物 光电特性 四氢呋喃 

分 类 号：TM24[一般工业技术—材料科学与工程] TQ317[电气工程—电工理论与新技术]