CM509AP-2双四选—模拟开关的工艺设计  

The Process Design of CM509 AP-2 Dual 4-Channel Analogue Switch

作　　者：江泽福[1] 

机构地区：[1]机电部第24研究所,重庆永川632167

出　　处：《微电子学》1992年第3期26-28,共3页Microelectronics

摘　　要：本文介绍了CM509AP-2双四选一模拟开关电路的工艺设计及电路性能。电路采用外延衬底材料,两次注入源/漏区,以提高击穿电压。制作出的电路在±15V下工作,±22V下无闭锁效应。The process design of CM509AP-2 dual 4-channel analogue switch and its circuit performance are introduced in the paper. It employs epitaxial substrate material and adopts two implantations into source and drain region to improve breakdown voltage. This device operates at±15V and is free of latch-up effect at ±22V.

关 键 词：CMOS IC 模拟 开关 设计 

分 类 号：TM564[电气工程—电器]