高精密CMOS能隙基准源的研究  

Investigation Into Precision CMOS Band-Gap Reference Sources

作　　者：罗福明[1] 沈延钊[1] 南德恒[1] 

机构地区：[1]清华大学微电子所,北京100034

出　　处：《微电子学》1992年第4期39-43,共5页Microelectronics

摘　　要：本文设计和研究了与n阱CMOS工艺兼容的高精密CMOS能隙基准源电路。该电路实现了全温度曲率补偿,降低了运放失调电压对精度的影响。理论上证明,具有极好的温度特性。SPICE模拟表明,精度可达到<3ppm/℃,实验芯片亦达到预期结果。The design of a precision CMOS band gap reference source that is compa-tibel with n-well CMOS technology is resented and investigated. The effect of offset voltage on the accuracy is significantly reduced due to the realization of full temperature curvature compensation. Theoretically, the circuit has excellen temperature characteristics. SPICE simulation shows that the accuracy of <3ppm/℃ is obtainable and experimental chips also have reached the intended goal.

关 键 词：CMOS 电路设计 版图设计 集成电路 

分 类 号：TN432[电子电信—微电子学与固体电子学]