化学溶液分解法制备LaNiO_3薄膜的研究  

STUDY ON THE PREPARATION OF LaNiO_3 THIN FILMS USING CHEMICAL SOLUTION DECOMPOSITION METHOD

作　　者：李亚巍[1] 孟祥建[1] 于剑[1] 王根水[1] 孙璟兰[1] 褚君浩[1] 张伟风[2] 

机构地区：[1]中国科学院上海技术物理所红外物理国家实验室,上海200083 [2]河南大学物理系,河南开封475001

出　　处：《红外与毫米波学报》2003年第4期269-272,共4页Journal of Infrared and Millimeter Waves

摘　　要：采用化学溶液分解法直接在单晶Si(10 0 )衬底上制备了LaNiO3 薄膜 ,研究了不同热处理气氛 (空气和氧气 )对薄膜的结晶性、晶粒尺寸、电阻率以及其上面生长的锆钛酸铅 (PZT)薄膜的影响 .结果发现二种气氛得到的LaNiO3 薄膜的电阻率相差较大 ,其中在氧气中制备的薄膜电阻率仅为在空气中得到的 1/ 2 .对LaNiO3 薄膜的导电机制进行了讨论 .LaNiO3 thin films on Si ( 100) substrates were prepared using chemical solution decomposition method ( CSD). The effects of annealing atmosphere (air and oxygen) on the crystallinity, grain size and resistivity of LaNiO3 thin films, and the PZT films grown on the LNO layers were studied. The results showed that the value of the resistivity of the LaNiO3 thin films annealed in oxygen is only half of that obtained in air. The conductive mechanism of LaNiO3 thin films was discussed.

关 键 词：化学溶液分解法 镍酸镧薄膜 锆钛酸铅 电阻率 CSD 退火气氛 光电材料 

分 类 号：TN204[电子电信—物理电子学] O484.1[理学—固体物理]