SiC(N)/LAS纳米陶瓷复合材料的介电特性  

DIELECTRIC PROPERTIES OF SiC(N)/LAS NANO-COMPOSITE

作　　者：罗发[1] 周万城[1] 焦桓[1] 赵东林[1] 

机构地区：[1]西北工业大学凝固技术国家重点实验室,西安710072

出　　处：《复合材料学报》2003年第3期98-101,共4页Acta Materiae Compositae Sinica

基　　金：航空基金资助项目(99G53082)

摘　　要：　采用LAS玻璃粉末和激光诱导法制备的纳米SiC(N)粉体,通过热压烧结法制备了SiC(N)/LAS纳米陶瓷复合材料,研究了该复合材料在8.2～12.4GHz频率范围内的微波介电特性。结果表明,SiC(N)/LAS的介电常数主要受纳米SiC(N)粉体含量的控制,此外还与烧结温度有关。随着烧结温度的提高,复合材料介电常数和介电损耗均随之增大。SiC(N)/LAS对电磁波的损耗作用明显优于同体积分数的纳米SiC(N)与石蜡混合体,这与烧结过程中形成的碳界面有关。The nano SiC(N) powder was synthesized by laser-induced gas-phase reaction. SiC(N)/LAS nano-composite was prepared from LAS glass powder and as-formed nano SiC(N) powder by the hot-pressing method. The microwave dielectric properties of the SiC(N)/LAS nano-composite in a frequency range of 8.2-12.4 GHz were studied. The results show that the permittivity of the nano-composite is related closely to the content of nano SiC(N) and influenced fairly by sintering temperature. Compared with the mixture of nano SiC(N) and paraffin, the sintering process improved the SiC(N)/LAS nanocomposite's dissipation to the electromagnetic wave. The amelioration is ascribed to the formation of the carbon interface between nano SiC(N) and LAS matrix.

关 键 词：纳米SiC(N) LAS玻璃陶瓷 SiC(N)/LAS复合材料 介电常数 

分 类 号：TB332[一般工业技术—材料科学与工程] TM25[电气工程—电工理论与新技术]