液相电沉积技术制备n-型铋碲纳米线阵列温差电材料  

Fabrication of n-type Bismuth-Tellurium Nanowire Array Thermoelectric Materials by Electrodeposition Technology

作　　者：王为[1] 张伟玲[1] 王惠[2] 陶松[1] 张建中[3] 

机构地区：[1]天津大学化工学院 [2]天津大学分析中心,天津300072 [3]电子信息产业部第十八所,天津300072

出　　处：《无机材料学报》2004年第1期127-132,共6页Journal of Inorganic Materials

基　　金：国家自然科学基金(50071040)

摘　　要：对铋碲合金电沉积过程进行了研究,并分析了温度和硝酸浓度对铋碲共沉积的影响.结果表明,Bi3+和HTeO2+合溶液中的电沉积是分阶段进行的.溶液中HTeO2+的存在阻碍了Bi3+的电沉积.铋碲共沉积的速度随温度的升高以及溶液中硝酸浓度的增加而加速.实验中还研究了沉积电位对铋碲组成的影响.采用ESEM分析了铋碲纳米线阵列温差电材料的形貌.The electrodeposition process of bismuth-tellurium co-deposition was studied, and the effects of temperature and HNO3 concentration on the co-deposition process were also analyzed. Based on the work, n-type bismuth-tellurium nanowire array thermoelectric materials were fabricated through DC electrodeposition by using anodic alumina template with a pore diameter of 50nm as the cathode. The results show that electrodeposition potential has great effect on the compositon of bismuth-tellurium alloy.

关 键 词：铋碲温差电材料 纳米线阵列 电沉积 

分 类 号：TQ153[化学工程—电化学工业]