新型压电晶体La_3Ga_5SiO_(14)的生长及特性  

Crystal Growth and Characterization of New Piezoelectric Crystals La_3Ga_5SiO_(14)

作　　者：王增梅[1] 袁多荣[1] 潘立虎[2] 张沛霖[3] 李正法[3] 程秀凤[1] 吕衍秋[1] 段秀兰[1] 郭世义[1] 吕孟凯[1] 许东[1] 

机构地区：[1]山东大学晶体材料国家重点实验室,济南250100 [2]航天机电集团公司二院二零三所,北京100854 [3]山东大学物理系,济南250100

出　　处：《压电与声光》2003年第6期490-493,共4页Piezoelectrics & Acoustooptics

基　　金：军工配套基金资助项目;国家自然科学基金资助项目(60178029)

摘　　要：用提拉法成功地生长了La3Ga5SiO14(LGS)单晶,用X-ray粉末衍射证明了其单晶结构,测得沿Y、Z方向的热膨胀系数分别为5×10-6K-1、3.8×10-6K-1,在453.15K时测得晶体的比热为0.90J/g·K,并在200～800nm之间测其透过谱,测得了其全部压电及弹性常数。La_3Ga_5SiO_(14) (LGS) single crystals have been successfully grown using Czochralski technique. The X-ray powder diffraction (XRPD) of single crystal was performed to identify the crystal structure. The data of thermal expansion coefficients along Y and Z direction have been measured to be 5×10^(-6) K^(-1) and 3.8×10^(-6) K^(-1), respectively. The specific heat of the crystal has been measured to be 0.90 J/gK at 453.15 K. The transmittance spectra range from 200 to 800 nm were measured. Whole set of piezoelectric and elastic constants were measured.

关 键 词：提拉法 La3Ga5SiO14 结构 热膨胀 比热 透过谱 压电特性 

分 类 号：TM229.1[一般工业技术—材料科学与工程]