退火对CdS/SiO_2介孔组装体系吸收边的影响  

ANNEALING EFFECT ON THE ABSORPTION EDGE OF CdS/SiO_2 MESOPOROUS ASSEMBLY

作　　者：杨一军[1] 阚彩侠[2] 毕会娟[2] 张立德[2] 

机构地区：[1]安徽淮北煤炭师范学院物理系,淮北235000 [2]中科院固体物理研究所,安徽合肥230031

出　　处：《复合材料学报》2003年第2期47-52,共6页Acta Materiae Compositae Sinica

基　　金：安徽省教育厅自然科学研究项目(批准号:2001kj201ZC)

摘　　要：　本文作者通过溶胶-凝胶法获得块材CdS纳米颗粒/介孔SiO2组装体系(CdS/SiO2)块体样品,室温下的拉曼谱中观察到CdS的两个特征峰;在氮气和空气气氛中退火处理后,发现吸收边位置随复合量和退火温度不同而移动。经计算,CdS颗粒粒径的理论值与其自由激子半径相当,说明吸收边的移动起因于量子限域效应。Monolithic mesoporous CdS/SiO2 assembly systems were obtained by the sol-gel technique. The characteristic peaks of CdS in Raman spectrum were observed at room temperature. The as-prepared samples were annealed under air and nitrogen, respectively. It is observed that the absorption edge of the CdS/SiO2 shifts in comparison with that of the bulk CdS as the annealing temperature and the loading of CdS in SiO2 change. The calculation results show that the size of CdS particles in the mesoporous SiO2 is equal to its exciton radius. The shift of the absorption edge is attributed to the quantum size effect.

关 键 词：Cds纳米颗粒 介孔组装体系 吸收边 

分 类 号：TB383[一般工业技术—材料科学与工程]