抑制浪涌电流用硅单晶热敏电阻器  

Silicon Single Crystal Thermistors for Suppressing Inrush Current

作　　者：刘会冲 陶明德 冯中华 蒋朝伦 李金琢 

机构地区：[1]风华电子工程研究开发中心,广东肇庆526020

出　　处：《电子元件与材料》2004年第2期18-20,共3页Electronic Components And Materials

摘　　要：为解决氧化物型抑制浪涌用热敏电阻电阻率高、温度系数小的矛盾,采用N型或者P型硅单晶扩散掺金,研制成一种新型的抑制浪涌电流用硅单晶热敏电阻器。该电阻器温度灵敏度高(a=6.0%1)、残留电阻小(小于1伲⒑纳⑾凳?5mW、时间常数为50s。与抑制浪涌电流用的氧化物NTCR相比,其制造工艺简单、成本低、一致性好,且易实现片式化和集成化。讨论了这种元件的热敏机理。A new silicon single crystal thermistor for suppressing inrush current has been developed by doping Au in N-Si or P-Si. Of the thermistor, the temperature sensitivity a is 6.0%1, residual resistance 0.1W and dissipation factor 25 mW, time constant 50 s. As compared with oxide type NTCR, its manufacture technology is simpler, cost lower and uniformity better. The thermistors can be made in the form of SMD or be integrated more easily.

关 键 词：掺金硅单晶热敏电阻器 抑制浪涌电流 热敏特性 

分 类 号：TN371[电子电信—物理电子学]