均匀弯曲硅单晶X射线衍射行为  

BEHAVIOUR OF X-RAY DIFFRACTION FROM UNIFORMLY BENT Si CRYSTAL

作　　者：杨平[1] 

机构地区：[1]南京大学固体微结构物理国家实验室,南京210008

出　　处：《物理学报》1992年第2期267-271,共5页Acta Physica Sinica

摘　　要：本文研究均匀弯曲硅单晶的X射线衍射,实验得到的积分衍射强度随应变增强单调上升,与理论结果一致,在截面形貌上,Pendellosung条纹的可见度随着应变的增强而降低,这反映了晶体内波场间相对强度差变大和波场轨迹的变化。X-ray diffraction from uniformly bent Si crystal has been studied. The experimental integrated diffraction intensity rises monotonically with the strain in the crystal, this coincides with the theory. The visibility of Pendellosung fringes becomes poorer as the strain goes up, this reflects the increse of intensity difference between the wave fields and variation of the trace of the wave fields in the crystal.

关 键 词：硅 单晶 弯曲 X射线衍射 波场 

分 类 号：O766.3[理学—晶体学]