EUT对TEM传输室基本特性影响的边界元分析  

BEM Analysis of the Effects of EUT on the Basic Properties of TEM Cell

作　　者：胡玉生[1] 蒋全兴[1] 徐加征[1] 

机构地区：[1]东南大学机械工程系电磁兼容研究室,南京210096

出　　处：《微波学报》2003年第4期79-82,共4页Journal of Microwaves

摘　　要：采用边界元法分析了不同尺寸的良导体受试设备 (EquipmentUnderTest ,EUT)对TEM传输室特性阻抗和场分布的影响 ,并估算了敏感度测试中EUT所承受暴露场强的大小。计算结果表明 :与空载时相比当EUT满足“1/ 3准则”时 ,TEM传输室的特性阻抗下降值小于 2Ω ,EUT上、下方场强增加 3～ 4dB ,EUT上部所承受暴露场强比通常的估算方法高约 4～ 6dB。The effects on the characteristic impedance and field distribution of TEM cell c aused by perfectly conducting EUT (Equipment Under Test) were analyzed, and the field strength the EUT exposed to during the sensitivity test was evaluated. The results show that when EUT is consistent with the ”one third area” rule of th umb, the characteristic impedance of TEM cell decreases less than 2Ω comparing with that of empty TEM cell, the field strength above and bellow the EUT increas es about 3～4dB, and the field strength the top of EUT exposed to is about 4～6d B more than that calculated by general method. The measured results agree very w ell with the calculated ones.

关 键 词：EUT 边界元法 良导体受试设备 TEM传输室 特性阻抗 场分布 横电磁波 电磁兼容 

分 类 号：TN015[电子电信—物理电子学]