新型PST铁电薄膜的制备及其电性能研究  

A Review of Preparation Methods and Electrical Properties of New PST Thin Films

作　　者：李元昕[1] 刘梅冬[1] 曾亦可[1] 姜胜林[1] 邓传益[1] 

机构地区：[1]华中科技大学电子科学与技术系,武汉430074

出　　处：《材料导报》2003年第F09期218-221,共4页Materials Reports

基　　金：国家自然科学基金重大研究计划(90201028);"863"计划新材料领域资助项目(2002AA325080)

摘　　要：PST铁电薄膜是一种具有优良铁电、热释电和介电等性能的铁电材料。该材料在红外探测器、红外焦平面阵列、热成像器件、非易失性铁电存储器和大容量电容器等方面具有广泛的应用。PST铁电薄膜的制备方法多种多样,各具优缺点,不同的制备工艺对薄膜的性能有影响。叙述了PST铁电薄膜的制备技术、电性能和在热释电红外探测器方面的应用。PST thin films are ferroelectric materials with many advantages such as excellent ferroelectric, pyroelectric and dielectric properties. They have a wide range of applications in pyroelectric infrared devices, uncooled infrared focal plane arrays, infrared thermal imaging devices, non-volatile ferroelectric RAM and large value capacitor. There are many methods for preparation of PST thin films, and each has its advantages and disadvantage . The properties of PST thin films depend on the preparation conditions . This paper reviews the preparation methods and electrical properties of PST thin films.

关 键 词：PST铁电薄膜 制备工艺 电性能 铁电材料 热释电红外探测器 

分 类 号：TM221[一般工业技术—材料科学与工程]