硅压阻式传感器的温度特性及其补偿  

Temperature properties and compensation for silicon piezoresistive sensors

作　　者：樊尚春[1] 彭春荣[1] 

机构地区：[1]北京航空航天大学自动化学院,北京100083

出　　处：《微纳电子技术》2003年第7期484-488,共5页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目 (5 0 2 75 0 0 9);航空科学基金资助项目 (0 2 15 10 18)

摘　　要：基于硅压阻式传感器的工艺过程与后续电路设计 ,讨论了减小其温度影响的措施。文中对在相同的硅基底上 ,采用诸如扩散、离子注入、薄膜淀积以及溅射等不同加工工艺制作实现的不同的压敏电阻特性 ,特别是温度特性进行了探讨和比较。针对一种具体的硅杯结构的压阻式传感器 ,设计、选择了加工工艺 ,给出了压敏电阻的近似温度补偿公式 。Based on the fabrication process of silicon piezoresistive sensors and the design of subsequent conditioning circuit, the measures for reducing the temperature effects on the sensors were discussed. The properties, especially the temperature property of the piezoresistors , which were manufactured using different processes such as diffusion, ion implantation, deposition and sputtering of films,were studied and compared in this paper. For a kind of silicon piezoresistive sensors with silicon cup structure, the fabrication processes were designed and selected. An approximate polynomial was given for temperature compensation and realization scheme for compensation circuit of sensors was discussed.

关 键 词：阻式传感器 温度特性 温度补偿 硅传感器 扩散掺杂工艺 压阻特性 

分 类 号：TP212.11[自动化与计算机技术—检测技术与自动化装置]