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作 者:王桂[1] 王延吉[1] 宋宝俊[1] 许永权[1]
出 处:《无机化学学报》2003年第9期988-992,共5页Chinese Journal of Inorganic Chemistry
基 金:国家自然科学基金资助项目(No.20176008)。
摘 要:The activity of Co-SrTiO3 for photocatalytic decomposition of water into hydr ogen was studied, and the reason for improvement of activity of supported cataly sts by first reduction in H2 at a higher temperature and then reoxidation in oxy gen at a lower temperature was analyzed. The mechanism of the photocatalysis of Co-SrTiO3-R-O and Ni-SrTiO3-R-O catalyst was investigated. The metal, Ni o r Co deposited at the interface between the P-type semiconductor, NiO or CoO, a nd the N-type semiconductor, SiTiO3, which may act as the trapped site of elect ron and hole from the N-type semiconductor and the P-type semiconductor respec tively, suppresses the recombination of electron and hole in the bulk of semicon ductor, and furthermore increase the catalytic activity of the catalyst. A highe r activity of Co-SrTiO3-R-O for water decomposition than that of Ni-SrTiO3- R-O is mainly due to CoO having a narrower band gap and a wider range of light absorbance, compared with NiO.The activity of Co-SrTiO3 for photocatalytic decomposition of water into hydrogen was studied, and the reason for improvement of activity of supported catalysts by first reduction in H-2 at a higher temperature and then reoxidation in oxygen at a lower temperature was analyzed. The mechanism of the photocatalysis of Co-SrTiO3-R-O and Ni-SrTiO3-R-O catalyst was investigated. The metal, Ni or Co deposited at the interface between the P-type semiconductor, NiO or CoO, and the N-type semiconductor, SiTiO3, which may act as the trapped site of electron and hole from the N-type semiconductor and the P-type semiconductor respectively, suppresses the recombination of electron and hole in the bulk of semiconductor, and furthermore increase the catalytic activity of the catalyst. A higher activity of Co-SrTiO3-R-O for water decomposition than that of Ni-SrTiO3-R-O is mainly due to CoO having a narrower band gap and a wider range of light absorbance, compared with NiO.
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