P-AlGaAs/n-GaAs异质结载流子输运机理  

Transport Mechanism of Carriers in P-AlGaAs/n-GaAs Heterojunction

作　　者：朱文章[1] 刘士毅[1] 

机构地区：[1]厦门大学物理学系

出　　处：《厦门大学学报（自然科学版）》1992年第1期34-38,共5页Journal of Xiamen University：Natural Science

基　　金：国家自然科学基金

摘　　要：在20～300K的温度内测量了P-AlGaAs/n-GaAs异质结伏安特性和光伏谱随温度的变化,认为在正偏压下,通过p-n结的载流子输运过程有隧穿复合和扩散两个机构参与,对实验数据进行拟合,计算一些重要参数。The temperature dependence of the current-voltage characteristics and photovolt-age spectra of P-AlGaAs/n-GaAs heterojunctions have been measured at temperature 20-300 K. It is believed that at forward bias two mechanisms, tunnel-recombination and diffusion take part in the transport process of carriers. The experimental data were fitted and some important parameters were obtained.

关 键 词：异质结 载流子 输运 砷化镓 

分 类 号：TN304.23[电子电信—物理电子学]